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2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
0,02
35A
30W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 35 140 16 129,3 30 150 -55 ~ +150
* L=0,07mH, VCC=12V
> Equivalent Circuit
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=17,5A VGS=4V VGS=10V ID=17,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=35A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=2xIDR VGS=0V -dIF/dt=100A/s Tch=25C
Min. 30 1,0
Typ. 1,5 10 0,2 10 0,022 0,014 33 1100 550 240 9 15 75 50 0,98 50 0,08
Max. 2,0 500 1,0 100 0,03 0,02 1650 830 360 15 23 115 75 1,71
16
35
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75 4,16
Unit C/W C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
30V
0,02
2SK2806-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=17,5A; VGS=10V
35A
30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
RDS(ON) [m]
2
ID [A]
1
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=35A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=12V; IAV 35A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Zth(ch-c) [K/W]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
EAV [mJ]
10
ID [A]
12
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
30V
0,02
2SK2806-01
FAP-IIIB Series
Power Dissipation PD=f(TC)
35A
30W
> Characteristics
110 100 90 80 70 PD / PDmax [%] 60 50 40 30 20 10 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
110 100 90 80 70 IAV / IAVmax [%] 60 50 40 30 20 10 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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